Proximate capless annealing of GaAs using a controlled-excess As vapor pressure source
- 15 April 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (8), 639-641
- https://doi.org/10.1063/1.92462
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Close-contact annealing of ion-implanted GaAs and InPApplied Physics Letters, 1980
- Chromium profiles in semi-insulating GaAs after annealing with a Si3N4 encapsulantApplied Physics Letters, 1979
- Capless anneal of ion-implanted GaAs in controlled arsenic vaporJournal of Applied Physics, 1979
- Low-dose n-type ion implantation into Cr-doped GaAs substratesSolid-State Electronics, 1977
- Capless annealing of ion-implanted GaAsApplied Physics Letters, 1976
- Effect of Heat‐Treatment of GaAs Encapsulated by SiO2Journal of the Electrochemical Society, 1976
- Silicon- and selenium-ion-implanted GaAs reproducibly annealed at temperatures up to 950 °CApplied Physics Letters, 1975
- Gallium arsenide field-effect transistors by ion implantationJournal of Applied Physics, 1974
- Vapour pressures of arsenic over InAs(c) and GaAs(c). The enthalpies of formation of InAs(c) and GaAs(c)The Journal of Chemical Thermodynamics, 1974
- OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDEApplied Physics Letters, 1970