On the Causes and Effects of Contaminations during rf Diode Deposition of Cr-Si Alloys
- 1 January 1993
- journal article
- research article
- Published by Wiley in Contributions to Plasma Physics
- Vol. 33 (4), 325-335
- https://doi.org/10.1002/ctpp.2150330411
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Influence of the Argon Pressure at dc Magnetron Sputtering on Contaminations in CrSi Thin FilmsContributions to Plasma Physics, 1992
- Oxygen incorporation during CrSi depositionThin Solid Films, 1991
- Correlations between sputtering parameters, composition and resistivity of granular NbN filmsThin Solid Films, 1990
- Magnetron sputtering deposited AIN waveguides: effect of the structure on optical propertiesVacuum, 1990
- Reactive radio frequency sputter deposition of higher nitrides of titanium, zirconium, and hafniumJournal of Vacuum Science & Technology A, 1986
- A neglected parameter (water contamination) in sputtering of MoS2 filmsThin Solid Films, 1986
- Deposition of Cr-Si thin films by reactive plasmatron-magnetron sputteringThin Solid Films, 1985
- Hydrogen determination by means of the1H(19F, αγ)16 O and1H(15N, αγ)12C resonance reactionsJournal of Radioanalytical and Nuclear Chemistry, 1984
- Studies of thin-film growth of sputtered hydrogenated amorphous siliconSolar Energy Materials, 1982
- Developments and trends in sputtering deposition techniquesThin Solid Films, 1976