Characterization of amorphous SiOx layers with ESCA
- 3 October 1985
- journal article
- Published by Elsevier in Surface Science
- Vol. 162 (1-3), 671-679
- https://doi.org/10.1016/0039-6028(85)90965-3
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Interpretation of XPS core level shifts and structure of thin silicon oxide layersSurface Science, 1985
- Probing the transition layer at the SiO2-Si interface using core level photoemissionApplied Physics Letters, 1984
- Multiple-bonding configurations for oxygen on silicon surfacesPhysical Review B, 1983
- Oxygen chemisorption and oxide formation on Si(111) and Si(100) surfacesJournal of Vacuum Science & Technology A, 1983
- XPS studies of SiO2 surface layers formed by oxygen ion implantation into siliconPhysica Status Solidi (a), 1983
- The problem of reactive sputtering and cosputtering of elemental targetsThin Solid Films, 1982
- Infrared Studies of Reactively Sputtered SiOx Films in the Composition Range 0.2 ≦ x ≦ 1.9Physica Status Solidi (b), 1982
- Studies of the Si/SiO2 interface by angular dependent X-ray photoelectron spectroscopyPhysica Status Solidi (a), 1981
- An analysis of the radial distribution function of SIOxJournal of Non-Crystalline Solids, 1975
- Optical properties of non-crystalline Si, SiO, SiOx and SiO2Journal of Physics and Chemistry of Solids, 1971