Interpretation of XPS core level shifts and structure of thin silicon oxide layers
- 1 April 1985
- journal article
- Published by Elsevier in Surface Science
- Vol. 152-153, 1063-1070
- https://doi.org/10.1016/0039-6028(85)90521-7
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Oxidation of etched silicon in air at room temperature; Measurements with ultrasoft X-ray photoelectron spectroscopy (ESCA) and neutron activation analysisSurface Science, 1983
- Studies of the Si/SiO2 interface by angular dependent X-ray photoelectron spectroscopyPhysica Status Solidi (a), 1981
- Structures chimique et electronique de l'interface SiO2-SiApplications of Surface Science, 1981
- Investigation of surfaces by means of the Zr Mζ radiationSurface Science, 1979
- High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of Local Atomic Structure: Application to Amorphous Siand the Si-SiInterfacePhysical Review Letters, 1979
- Theoretical and experimental investigations of the electronic structure of oxygen on siliconJournal of Vacuum Science and Technology, 1979
- SiSiO2 interface characterization by ESCASurface Science, 1979
- Chemical shift of Si 2p core level in SiOx calculation of relaxation contributionPhysica Status Solidi (b), 1979
- X-Ray Photoelectron Spectroscopy of SiO2-Si Interfacial Regions: Ultrathin Oxide FilmsIBM Journal of Research and Development, 1978
- Chemical bond and related properties of SiO2 III. Core-level shifts in SiOxPhysica Status Solidi (a), 1977