High Temperature Operated Enhancement-Type β-SiC MOSFET
- 1 November 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (11A), L2143-2145
- https://doi.org/10.1143/jjap.27.l2143
Abstract
Enhancement-type β-SiC MOSFETs have been fabricated on a single crystalline β-SiC layer grown on a 3-inch Si(100) substrate by chemical vapor deposition. The MOSFETs fabricated by applying the reactive ion etching technique show reasonable I-V characteristics at room temperature. The saturation tendency of the drain currents has been observed at a drain voltage as high as 18 V. The MOSFETs operate even at 350°C.Keywords
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