Monolithic integration of a thin and short metal-semiconductor-metal photodetector with a GaAlAs optical inverted rib waveguide on a GaAs semi-insulating substrate
- 6 November 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (19), 1966-1968
- https://doi.org/10.1063/1.102134
Abstract
The first fabrication of a thin and short GaAs metal-semiconductor-metal photodetector monolithically integrated with a GaAlAs optical inverted rib waveguide on a semi-insulating GaAs substrate is reported. An only 0.2-μm-thick and 100-μm-long GaAs absorbing layer is needed to detect 90% of the optical signal at 0.85 μm wavelength. Static, dynamic, and noise measurements have been performed and a bandwidth in excess of 15 GHz is obtained.Keywords
This publication has 10 references indexed in Scilit:
- Monolithic integration of a short-length GaInAs photoconductor with a GaAs/GaAlAs optical waveguide on a GaAs semi-insulating substrateApplied Physics Letters, 1988
- Monolithic integration of a GaInAs p-i-n photodiode and an optical waveguide: modeling and realization using chloride vapor phase epitaxyJournal of Lightwave Technology, 1988
- Noise characteristics of GaAs metal-semiconductor-metal photodiodesElectronics Letters, 1988
- Waveguide integrated MSM photodetector on InPElectronics Letters, 1988
- Monolithic integrated InGaAlAs/InP ridge waveguide photodiodes for 1.55 μm operation grown by molecular beam epitaxyApplied Physics Letters, 1987
- Monolithic integrated waveguide photodetectorElectronics Letters, 1987
- Waveguide-integrated pin photodiode on InPElectronics Letters, 1987
- Planar embedded GaInAs photodiode on semi-insulating InP substrate for monolithic integrationElectronics Letters, 1986
- Monolithic InGaAs photodiode array illuminated through an integrated waveguideElectronics Letters, 1985
- Metal-Semiconductor-Metal Photodetector for High-Speed Optoelectronic CircuitsJapanese Journal of Applied Physics, 1980