Low-Temperature Cleaning of GaAs Substrate by Atomic Hydrogen Irradiation
- 1 March 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (3A), L402-404
- https://doi.org/10.1143/jjap.30.l402
Abstract
Low-temperature cleaning of GaAs substrate by atomic hydrogen irradiation has been demonstrated. Atomic hydrogen was provided by dissociation of hydrogen gas, which was carried out in a simple cracking cell with a 1500°C tungsten filament. Auger electron spectroscopy showed that carbon was removed at 200°C and oxygen was removed at 400°C by 30-min atomic hydrogen irradiation. The surface cleaning of GaAs was confirmed by the change of RHEED pattern from halo to streak after the hydrogen irradiation.Keywords
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