Electromigration and diffusion of copper in aluminum thin films
- 1 April 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (4), 2782-2786
- https://doi.org/10.1063/1.326243
Abstract
Using an original radiotracer sectioning technique, we have measured the drift mobility, the diffusion coefficient, and the effective valency of copper in aluminum thin films in the temperature range 100–150 °C. The results are interpreted in view of the considerable increase of the lifetime of the electrical contacts on silicon substrates by doping aluminum with copper.Keywords
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