A new etch feature in germanium- and silicon-doped lec gallium arsenide
- 1 July 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 67 (2), 153-167
- https://doi.org/10.1016/0022-0248(84)90174-x
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- Direct observation of the principal deep level (EL2) in undoped semi-insulating GaAsApplied Physics Letters, 1983
- Correlation between Dislocation Distribution and FET Performances Observed in Low Cr Doped LEC GaAsJapanese Journal of Applied Physics, 1983
- Dislocation Density and Sheet Resistance Variations Across Semi-Insulating GaAs WafersIEEE Transactions on Microwave Theory and Techniques, 1982
- Inhomogeneous GaAs FET Threshold Voltages Related to Dislocation DistributionJapanese Journal of Applied Physics, 1982
- Arsenic precipitation at dislocations in GaAs substrate materialJournal of Applied Physics, 1980
- Microscopy Of Semi‐Insulating Gallium ArsenideJournal of Microscopy, 1980
- The identification of saucer-pit (S-pit) defects in GaAsJournal of Materials Science, 1978
- Dislocation-free GaAs by the liquid encapsulation techniqueJournal of Crystal Growth, 1972
- Surface preparation of single crystal n-type GaAs substrates studied by the channeling techniquePhysica Status Solidi (a), 1971
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965