Laser chemical technique for rapid direct writing of surface relief in silicon
- 15 June 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (12), 1018-1020
- https://doi.org/10.1063/1.92228
Abstract
High‐resolution etching of single‐crystal and polycrystalline silicon has been demonstrated using an argon‐ion laser to control microscopic chemical reactions. Gas‐phase Cl2 or HCl is used in reactions initiated both by surface heating and by molecular photolysis. Features smaller than 5 μm and etch rates greater than 6 μm/s have been obtained. The process seems immediately suitable for a variety of problems in integrated‐circuit fabrication.Keywords
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