Characterization of InGaAs-GaAs strained-layer lasers with quantum wells near the critical thickness
- 20 November 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (21), 2167-2169
- https://doi.org/10.1063/1.102089
Abstract
Data are presented on the efficiency, reliability, and temperature dependence of wavelength and threshold for strained-layer InxGa1−xAs-GaAs (x∼0.25, λ>1.06 μm) separate confinement heterostructure lasers for several thicknesses near the critical thickness. Devices with well thicknesses of 100 Å exhibit excellent time-zero characteristics and reliability, while those with 143 Å wells have higher initial thresholds and degrade rapidly.Keywords
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