Pulsed laser annealing of rf sputtered amorphous Si-H films doped with arsenic
- 1 April 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (4), 3261-3266
- https://doi.org/10.1063/1.331029
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Silicon solar cells realized by laser induced diffusion of vacuum-deposited dopantsJournal of Applied Physics, 1981
- Epitaxial regrowth of Ar implanted amorphous Si by laser annealingJournal of Applied Physics, 1980
- Electrical and structural characteristics of laser-induced epitaxial layers in siliconApplied Physics Letters, 1979
- Epitaxial regrowth of evaporated amorphous silicon by a pulsed laser beamApplied Physics Letters, 1978
- Epitaxial growth of deposited amorphous layer by laser annealingApplied Physics Letters, 1978
- Silicon epitaxy by pulsed laser annealing of evaporated amorphous filmsPhysics Letters A, 1978
- Influence of 16O, 12C, 14N, and noble gases on the crystallization of amorphous Si layersJournal of Applied Physics, 1977