Origin of the 1.080 eV (I2) photolumiscence line in irradiated silicon
- 28 February 1983
- journal article
- Published by Elsevier in Physica B+C
- Vol. 116 (1-3), 252-257
- https://doi.org/10.1016/0378-4363(83)90255-3
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- CW laser operation with new F+2-type color centers in NaFIEEE Journal of Quantum Electronics, 1982
- Luminescence of traps in electron-irradiated gallium-doped siliconPhysical Review B, 1982
- Excitation spectroscopy on the P, Q, R isoelectronic lines in indium doped siliconSolid State Communications, 1981
- Defect energy levels in boron-doped silicon irradiated with 1-MeV electronsPhysical Review B, 1977
- EPR of aSi interstitial complex in irradiated siliconPhysical Review B, 1976
- Recombination luminescence from ion implanted siliconRadiation Effects, 1976
- Aluminum and gallium impurity effects on the photoluminescence from electron irradiated, pulled siliconSolid State Communications, 1974
- Low-temperature photoluminescence from boron ion implanted SiRadiation Effects, 1974
- One phonon absorption from aluminium complexes in silicon compensated by lithium or electron irradiationJournal of Physics and Chemistry of Solids, 1970
- A Microscopic View of Radiation Damage in Semiconductors Using EPR as a Probe Invited PaperIEEE Transactions on Nuclear Science, 1969