Initial stages of heteroepitaxial growth of InAs on Si (100)

Abstract

Adsorption and desorption of In on partially and fully As-terminated Si(100) are investigated by laser-induced fluorescence detection and Auger electron spectroscopy using the methods of temperature programmed desorption and isothermal desorption. Desorption measurements show that As is bound to the surface more strongly than In. For In, a 2/3 order kinetic desorption mechanism is observed. This and Si Auger intensity attenuation measurements indicate a strong tendency for In to form three-dimensional islands on the As-terminated surface. The activation energy for In diffusion from the islands ranges from 1.5 to 1.9 eV, depending on the As coverage. The results have important implications for growth of InAs on Si(100).