Atom probe study of Cu-poor to Cu-rich transition during Cu(In,Ga)Se2 growth
- 5 December 2011
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 99 (23), 232108
- https://doi.org/10.1063/1.3665948
Abstract
Atomic scale chemistry of polycrystalline Cu(In,Ga)Se2 (CIGSe) thin film has been characterized at key points of the 3-stage process using atom probe tomography. 3D atom distributions have been reconstructed when the layer is Cu-poor ([Cu]/([Ga] + [In]) < 1), Cu-rich ([Cu]/([Ga] + [In]) > 1), and at the end of the process. Particular attention has been devoted to grain boundary composition and Na atomic distribution within the CIGSe layer. Significant variation of composition is highlighted during the growing process, providing fundamental information helping the understanding of high efficiency CIGSe formation.Keywords
This publication has 13 references indexed in Scilit:
- Atomic-scale characterization of the CdS/CuInSe2 interface in thin-film solar cellsApplied Physics Letters, 2011
- Fast Cu(In,Ga)Se2 precursor growth: Impact on solar cellThin Solid Films, 2011
- Recrystallization of CIGSe layers grown by three-step processes: A model based on grain boundary migrationActa Materialia, 2010
- Atom probe study of sodium distribution in polycrystalline Cu(In,Ga)Se2 thin filmActa Materialia, 2010
- Chromatic Aberrations in the Field Evaporation Behavior of Small PrecipitatesMicroscopy and Microanalysis, 2008
- Strategies for fabricating atom probe specimens with a dual beam FIBUltramicroscopy, 2005
- Electronic effects of sodium in epitaxial CuIn1−xGaxSe2Journal of Applied Physics, 1997
- Current issues in recrystallization: a reviewMaterials Science and Engineering: A, 1997
- Band-gap engineering in Cu(In,Ga) Se2 thin films grown from (In,Ga)2Se3 precursorsSolar Energy Materials and Solar Cells, 1996
- High-efficiency CuInxGa1−xSe2 solar cells made from (Inx,Ga1−x)2Se3 precursor filmsApplied Physics Letters, 1994