Excitation and decay mechanisms of the intra-4f luminescence of Yb3+ in epitaxial InP:Yb layers
- 11 January 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (2), 114-116
- https://doi.org/10.1063/1.99067
Abstract
The decay and excitation processes of internal transitions of Yb3+(4f13) incorporated in InP were investigated by means of time‐resolved photoluminescence and photoluminescence excitation spectroscopy. From the temperature dependence of the excited state lifetime we find several decay mechanisms, including a bound‐exciton‐like Auger process, energy transfer, and thermal depopulation. Excitation spectroscopy reveals that free carriers are needed during the excitation process of Yb centers.Keywords
This publication has 14 references indexed in Scilit:
- Yb-doped InP grown by metalorganic chemical vapor depositionApplied Physics Letters, 1987
- Rare earth ions in LPE III-V semiconductorsJournal of Crystal Growth, 1986
- Zeeman analysis of the ytterbium luminescence in indium phosphidePhysical Review B, 1985
- Ytterbium-doped InP light-emitting diode at 1.0 μmApplied Physics Letters, 1985
- Luminescence of the rare-earth ion ytterbium in InP, GaP, and GaAsJournal of Applied Physics, 1985
- Photoluminescence excitation spectroscopy on InP: YbPhysical Review B, 1984
- 1.54-μm luminescence of erbium-implanted III-V semiconductors and siliconApplied Physics Letters, 1983
- Rare earth activated luminescence in InP, GaP and GaAsJournal of Crystal Growth, 1983
- Efficient Luminescent Energy Transfer from Mn2+ to Yb3+ in CaF2Journal of the Electrochemical Society, 1977
- Unified model of the temperature quenching of narrow-line and broad-band emissionsJournal of Luminescence, 1975