Unpinned Interface Between Al[sub 2]O[sub 3] Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In[sub 0.53]Ga[sub 0.47]As(001)
- 1 January 2009
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 12 (8), G40-G43
- https://doi.org/10.1149/1.3139603
Abstract
An unpinned interface between an layer deposited by atomic layer deposition (ALD) and a chemically treated is demonstrated. The starting surface was prepared by wet etching with followed by a thermal desorption of residual As at immediately before ALD. Analysis of temperature-dependent capacitance–voltage measurements suggests that the Fermi level can sweep through the bandgap of , attaining true accumulation and inversion despite the presence of In oxide and In hydroxide at the interface. This is in contrast to the situation for residual As-related interfacial species, which have been reported to pin the Fermi level at oxide/III–V interfaces.Keywords
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