Observation of an ordered structure in the initial stage of Ge/Si heteroepitaxial growth
- 3 December 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (23), 2434-2436
- https://doi.org/10.1063/1.103868
Abstract
An ordered structure with the double periodicity in a 〈111〉 direction has been found by in situ reflection high‐energy electron diffraction observation in the initial stage of Ge films grown on (100)Si and (811)Si substrate surfaces by GeH4 gas source molecular beam epitaxy. The ordered structure is formed on {111} planes parallel to the side planes of 〈011〉 steps on {811} facets of Ge growing islands on both substrates. The formation is observed at substrate temperatures of 300–700 °C and is considered to result from solid phase reactions at the interfaces during growth.Keywords
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