A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters
- 1 July 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 46 (7), 1525-1531
- https://doi.org/10.1109/16.772506
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- SiGe-technology and components for mobile communication systemsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A high performance low complexity SiGe HBT for BiCMOS integrationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 7.7-ps CML using selective-epitaxial SiGe HBTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 54 GHz f/sub max/ implanted base 0.35 μm single-polysilicon bipolar technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- SiGe HBT technology: a new contender for Si-based RF and microwave circuit applicationsIEEE Transactions on Microwave Theory and Techniques, 1998
- Dimension scaling of 1/f noise in the base current of quasiself-aligned polysilicon emitter bipolar junction transistorsJournal of Applied Physics, 1997
- Low 1/f noise SiGe HBTs with application to low phase noise microwave oscillatorsElectronics Letters, 1997
- Impact of polysilicon emitter interfacial layer engineering on the 1/f noise of bipolar transistorsIEEE Transactions on Electron Devices, 1996
- Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuitsIEEE Transactions on Electron Devices, 1995
- APCVD-grown self-aligned SiGe-base HBTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993