Liquid phase epitaxy of cubic FeSi2 on (111) Si induced by pulsed laser irradiation

Abstract

Epitaxial βFeSi₂ layers thermally grown on (111) Si substrates have been irradiated by 25 ns ruby laser pulses in the energy density range 0.3–0.7 J/cm². Rutherford backscattering analyses in combination with the channeling effect have shown that the silicide stoichiometry does not change for irradiations up to an energy density of 0.5 J/cm², while alignment of the irradiated silicide along the [111] substrate normal direction is observed. Transmission electron diffraction in the plan view configuration showed that this silicide phase has a cubic symmetry with a lattice parameter very similar to that of Si. Diffraction patterns taken along different poles of the substrate indicated that the epitaxial phase is 180° rotated about the [111] normal direction like the B type NiSi₂ and CoSi₂ silicides.