The influence of hydrogen plasma treatment and proton implantation on the electrical properties of InAs
- 15 March 1993
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (6), 2882-2887
- https://doi.org/10.1063/1.353017
Abstract
The effects produced in InAs by hydrogen plasma treatment and proton implantation are discussed. It is shown that both treatments can produce an n‐type layer at the surface of p‐InAs. For the hydrogen plasma treatment the effect is explained by hydrogen donors complexing with the Be and Zn acceptors and rendering them electrically inactive, thus leaving the residual donors uncompensated. In proton implanted samples the p‐n conversion is due to a creation of donor‐type lattice defects.Keywords
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