Electrical properties of Si(100) films doped with low-energy (≤150 eV) Sb ions during growth by molecular beam epitaxy
- 31 October 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (18), 1732-1734
- https://doi.org/10.1063/1.99809
Abstract
A low-energy ultrahigh-vacuum compatible ion gun with single-grid optics was used to provide accelerated Sb ion doping during the growth of Si(100) by molecular beam epitaxy (MBE). The incorporation probability of accelerated Sb in MBE Si films grown at 800 °C with an ion acceleration potential of 150 eV was near unity, more than four orders of magnitude higher than for thermal Sb. The films exhibited complete dopant substitutionality and temperature-dependent electron mobilities were equal to the best reported bulk Si values for Sb concentrations up to 2×1019 cm−3, more than an order of magnitude higher than obtainable by thermal Sb doping during Si MBE. Transmission electron microscopy examination of all films showed no evidence of dislocations or other extended defects.Keywords
This publication has 17 references indexed in Scilit:
- A low-energy metal-ion source for primary ion deposition and accelerated ion doping during molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1987
- Silicon MBE: Recent developmentsSurface Science, 1986
- Secondary implantation of Sb into Si molecular beam epitaxy layersApplied Physics Letters, 1985
- Si molecular beam Epitaxy: A model for temperature dependent incorporation probabilities and depth distributions of dopants exhibiting strong surface segregationSurface Science, 1985
- Evaporative antimony doping of silicon during molecular beam epitaxial growthJournal of Applied Physics, 1984
- Model calculations for accelerated As ion doping of Si during molecular beam epitaxyJournal of Applied Physics, 1983
- Sharp profiles with high and low doping levels in silicon grown by molecular beam epitaxyJournal of Applied Physics, 1981
- Molecular beam epitaxy of silicon: Effects of heavy Sb dopingJournal of Crystal Growth, 1981
- Silicon molecular beam epitaxy with simultaneous ion implant dopingJournal of Applied Physics, 1980
- n‐Type Doping Techniques in Silicon Molecular Beam Epitaxy by Simultaneous Arsenic Ion Implantation and by Antimony EvaporationJournal of the Electrochemical Society, 1979