Planar channeling effects in Si(100)
- 1 January 1985
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 6 (1-2), 336-348
- https://doi.org/10.1016/0168-583x(85)90655-x
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Channeling in low energy boron ion implantationApplied Physics Letters, 1984
- SIMS investigation of very shallow implanted Si layersJournal of Vacuum Science & Technology A, 1983
- Incidence Angle Dependence of Planar Channeling in Boron Ion Implantation into SiliconJournal of the Electrochemical Society, 1983
- Channeling effect of low energy boron implant inIEEE Electron Device Letters, 1983
- Improved uniformity of implanted dose by a compensated scan pattern generatorNuclear Instruments and Methods in Physics Research, 1981
- Channeling and random equivalent depth distributions of 150 keV Li, Be, and B implanted in SiJournal of Applied Physics, 1980
- Considerations of ion channeling for semiconductor microstructure fabricationJournal of Vacuum Science and Technology, 1979
- Beam scanning-electrostaticRadiation Effects, 1979
- Uniform doping of channeled-ion implantationJournal of Applied Physics, 1978
- Channeling and dechanneling of ion-implanted phosphorus in siliconJournal of Applied Physics, 1973