Direct measurements of the velocity and thickness of ‘‘explosively’’ propagating buried molten layers in amorphous silicon
- 19 May 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (20), 1389-1391
- https://doi.org/10.1063/1.96918
Abstract
Simultaneous infrared (1152 nm) and visible (633 nm) reflectivity measurements with nanosecond resolution were used to study the initial formation and subsequent motion of pulsed KrF laser-induced ‘‘explosively’’ propagating buried molten layers in ion implantation-amorphized silicon. The buried layer velocity decreases with depth below the surface, but increases with KrF laser energy density; a maximum velocity of about 14 m/s was observed, implying an undercooling-velocity relationship of ∼14 K/(m/s). Z-contrast scanning transmission electron microscopy was used to form a direct chemical image of implanted Cu ions transported by the buried layer and showed that the final buried layer thickness was <15 nm.Keywords
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