Critical review of the current status of thickness measurements for ultrathin SiO2 on Si Part V: Results of a CCQM pilot study
- 1 September 2004
- journal article
- review article
- Published by Wiley in Surface and Interface Analysis
- Vol. 36 (9), 1269-1303
- https://doi.org/10.1002/sia.1909
Abstract
No abstract availableKeywords
This publication has 81 references indexed in Scilit:
- Thin Dielectric Film Thickness Determination by Advanced Transmission Electron MicroscopyMicroscopy and Microanalysis, 2003
- Optical and ion-scattering study of SiO2layers thermally grown on 4H-SiCSemiconductor Science and Technology, 2002
- Effects of elastic-electron scattering on measurements of silicon dioxide film thicknesses by X-ray photoelectron spectroscopyJournal of Electron Spectroscopy and Related Phenomena, 2001
- Evaluation of electron inelastic mean free paths for selected elements and compoundsSurface and Interface Analysis, 2000
- Validation and accuracy of software for peak synthesis in XPSJournal of Electron Spectroscopy and Related Phenomena, 1998
- Neutron scattering lengths and cross sectionsNeutron News, 1992
- Optical functions of silicon determined by two-channel polarization modulation ellipsometryOptical Materials, 1992
- Quantitative analysis of the inelastic background in surface electron spectroscopySurface and Interface Analysis, 1988
- Precision absolute thin film standard reference targets for nuclear reaction microanalysis of oxygen isotopes: Part I: 16O standardsNuclear Instruments and Methods, 1978
- Microanalysis by the direct observation of nuclear reactions using a 2 MeV Van de GraaffNuclear Instruments and Methods, 1971