GaAs-based diode lasers on Si with increased lifetime obtained by using strained InGaAs active layer
- 18 November 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (21), 2634-2635
- https://doi.org/10.1063/1.105921
Abstract
Strained InGaAs/AlGaAs quantum well diode lasers have been fabricated on Si substrates for the first time. A GaAs buffer layer was grown on each Si wafer by temperature‐cycled organometallic vapor phase epitaxy (OMVPE). The wafer was then transferred to a second reactor for OMVPE growth of a graded‐index separate‐confinement heterostructure single‐quantum well laser structure. For lasers with a cavity length of 1000 μm, room‐temperature pulsed threshold current densities as low as 174 and 195 A/cm2 have been obtained for active layer compositions of In0.02Ga0.98As and In0.05Ga0.95As, respectively. One laser with an In0.05Ga0.95As active layer operated cw for 56.5 h, a record lifetime for GaAs‐based diode lasers on Si.Keywords
This publication has 10 references indexed in Scilit:
- Room-temperature CW operation of GaAs-AlGaAs diode lasers on silicon-on-insulator wafersIEEE Photonics Technology Letters, 1991
- Low-threshold continuous-wave room-temperature operation of AlxGa1−xAs/GaAs single quantum well lasers grown by metalorganic chemical vapor deposition on Si substrates with SiO2 back coatingApplied Physics Letters, 1990
- Room-temperature continuous operation of GaAs/AlGaAs lasers grown on Si by organometallic vapor-phase epitaxyJournal of Applied Physics, 1990
- Inhibited dark-line defect formation in strained InGaAs/AlGaAs quantum well lasersIEEE Photonics Technology Letters, 1990
- Low degradation rate in strained InGaAs/AlGaAs single quantum well lasersIEEE Photonics Technology Letters, 1990
- Long-lived InGaAs quantum well lasersApplied Physics Letters, 1989
- Effects of microcracking on AlxGa1−xAs-GaAs quantum well lasers grown on SiApplied Physics Letters, 1988
- Stability of 300 K continuous operation of p-n AlxGa1−xAs-GaAs quantum well lasers grown on SiApplied Physics Letters, 1987
- Continuous-wave operation of extremely low-threshold GaAs/AlGaAs broad-area injection lasers on (100) Si substrates at room temperatureOptics Letters, 1987
- Degradation Behavior of Optoelectronic DevicesMRS Proceedings, 1982