Inhibited dark-line defect formation in strained InGaAs/AlGaAs quantum well lasers
- 1 August 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 2 (8), 531-533
- https://doi.org/10.1109/68.58039
Abstract
Dark-line defect formation is compared in GaAs/AlGaAs and strained InGaAs/AlGaAs quantum well lasers. Dark-line defects have high growth velocity alongKeywords
This publication has 10 references indexed in Scilit:
- Low degradation rate in strained InGaAs/AlGaAs single quantum well lasersIEEE Photonics Technology Letters, 1990
- Viable strained-layer laser at λ=1100 nmJournal of Applied Physics, 1990
- Characterization of InGaAs-GaAs strained-layer lasers with quantum wells near the critical thicknessApplied Physics Letters, 1989
- Degradation kinetics of GaAs quantum well lasersApplied Physics Letters, 1989
- Long-lived InGaAs quantum well lasersApplied Physics Letters, 1989
- Dark-line observations in failed quantum well lasersApplied Physics Letters, 1988
- Degradation of III–V Opto‐Electronic DevicesJournal of the Electrochemical Society, 1988
- Chapter 6 Defects in III–V Compound SemiconductorsPublished by Elsevier ,1985
- Dislocation pinning in GaAs by the deliberate introduction of impuritiesIEEE Journal of Quantum Electronics, 1975
- Rapid degradation phenomenon in heterojunction GaAlAs–GaAs lasersJournal of Applied Physics, 1974