High-quality YBa2Cu3O7−x thin films by plasma-enhanced metalorganic chemical vapor deposition at low temperature
- 2 September 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (10), 1254-1256
- https://doi.org/10.1063/1.105468
Abstract
Single‐crystalline epitaxial YBa2Cu3O7‐x thin films with a sharp superconducting transition temperature of 90 K and a critical current density of 3.3×106 A/cm2 at 77 K were prepared by a plasma‐enhanced metalorganic chemical vapor deposition (PE‐MOCVD) process. The films were formed in situ on (100) LaAlO3 substrates at a temperature of 670 °C in 2 Torr partial pressure of N2O. X‐ray analysis indicated that films grew epitaxially with the c‐axis perpendicular to the substrate and the a and b axes uniformly aligned along the LaAlO3 [100] directions. High‐resolution transmission electron microscopy along with electron diffraction revealed that the films grew epitaxially with atomically abrupt film‐substrate interfaces. The high degree of epitaxial crystallinity of the films was also confirmed by Rutherford backscattering spectroscopy which gave a minimum channeling yield of 9%.Keywords
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