The 1.6-kV AlGaN/GaN HFETs
- 28 August 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 27 (9), 716-718
- https://doi.org/10.1109/led.2006.881084
Abstract
The breakdown voltages in unpassivated nonfield-plated AlGaN/GaN HFETs on sapphire substrates were studied. These studies reveal that the breakdown is limited by the surface flashover rather than by the AlGaN/GaN channel. After elimination of the surface flashover in air, the breakdown voltage scaled linearly with the gate-drain spacing reaching 1.6 kV at 20 mum. The corresponding static ON-resistance was as low as 3.4 mOmegamiddotcm2. This translates to a power device figure-of-merit VBR 2/RON=7.5times108 V2middotOmega-1 cm-2, which, to date, is among the best reported values for an AlGaN/GaN HFETKeywords
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