Electrical conductivity of Ge films during laser-induced crystallization

Abstract
The electrical conductivity of Ge films is traced during and after pulsed medium power laser irradiation (≲1 kW/pulse, 10−6‐sec pulse duration). A model is given which allows one to understand the physical processes involved in laser‐induced crystallization, namely, the influence of the film‐substrate interface on nucleation, crystal size, and crystal growth.