AlGaInP double heterostructure visible-light laser diodes with a GaInP active layer grown by metalorganic vapor phase epitaxy
- 1 June 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 23 (6), 704-711
- https://doi.org/10.1109/jqe.1987.1073424
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperatureJournal of Crystal Growth, 1986
- Continuous wave operation (77 K) of yellow (583.6 nm) emitting AlGaInP double heterostructure laser diodesApplied Physics Letters, 1986
- Room-temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor depositionApplied Physics Letters, 1986
- Room-temperature continuous-wave operation of an AlGaInP mesa stripe laserApplied Physics Letters, 1986
- Room-temperature CW operation of AlGaInP double-heterostructure visible lasersElectronics Letters, 1985
- High Aluminum Composition AlGaInP Grown by Metalorganic Chemical Vapor Deposition –Impurity Doping and 590 nm (Orange) Electroluminescence–Japanese Journal of Applied Physics, 1984
- Metalorganic InP and Inx Ga1-x, Asy P1-y, on InP epitaxy at atmospheric pressureJournal of Electronic Materials, 1984
- Molecular beam epitaxial growth of InGaAlP on (100) GaAsJournal of Applied Physics, 1982
- The growth and characterization of uniform Ga1-xInxAs (X ≤.25) by Organometallic VPEJournal of Electronic Materials, 1981
- Conduction Bands in In1−xAlxPJournal of Applied Physics, 1970