Investigation of the growth kinetics of glow-discharge hydrogenated amorphous silicon using a radical separation technique
- 1 October 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (7), 2351-2356
- https://doi.org/10.1063/1.337144
Abstract
The deposition kinetics of hydrogenated amorphous silicon (a-Si:H) from a SiH4 glow-discharge plasma have been investigated by examining the diffusion of SiH3 monoradicals in the discharge-free space within a triode reactor. This experiment suggests that the SiH3 radicals are responsible for about 37% of the total deposition rate of a-Si:H in a conventional SiH4 glow-discharge process. The contribution of other radicals and atoms to the deposition rate is also discussed through the analysis of reaction-rate constants.Keywords
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