Electronic transport properties of thin films of WSi2and MoSi2

Abstract

The transport properties, resistivity and Hall coefficients have been measured from 4 to 300 K for WSi₂ and MoSi₂ films as deposited and after different annealing stages. In samples annealed at 1000 degrees C the room temperature resistivity is dominated by holes. The sign of the Hall effect changes in both disilicides at about 100 K. As-deposited amorphous samples display a very strong negative temperature coefficient of resistivity, characteristic of highly disordered metallic glasses; in these samples the Hall effect could not be measured. The samples corresponding to the resistivity maximum (after respective anneals at 550 and 600 degrees C), known to be already crystallised with a high density of stacking faults, also show a negative temperature coefficient; the Hall constant remains dominated by hole transport over the whole range of temperatures investigated. At room temperature the temperature contribution to the resistivity is 11 mu Omega cm for WSi₂ and 19 mu Omega cm for MoSi₂.