MODFET 2-D hydrodynamic energy modeling: optimization of subquarter-micron-gate structures
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (1), 21-30
- https://doi.org/10.1109/16.43796
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Two-dimensional simulation of submicrometer GaAs MESFETs: surface effects and optimization of recessed gate structuresIEEE Transactions on Electron Devices, 1988
- Methodology for submicron device model developmentIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1988
- Two-dimensional numerical model for the high electron mobility transistorSolid-State Electronics, 1987
- Performance analysis of sub-micron gate GaAs MESFETsSolid-State Electronics, 1987
- MODFET Ensemble Monte Carlo model including the quasi-two-dimensional electron gasIEEE Transactions on Electron Devices, 1986
- Classical versus quantum mechanical calculation of the electron distribution at the n-AlGaAs/GaAs heterointerfaceIEEE Transactions on Electron Devices, 1986
- Techniques for small-signal analysis of semiconductor devicesIEEE Transactions on Electron Devices, 1985
- Thermionic emission-diffusion theory of isotype heterojunctionsSolid-State Electronics, 1984
- Numerical analysis of heterostructure semiconductor devicesIEEE Transactions on Electron Devices, 1983
- Electron density of the two-dimensional electron gas in modulation doped layersJournal of Applied Physics, 1983