Qualitative and quantitative assessments of the growth of (Al,Ga) As-GaAs heterostructures by in situ ellipsometry
Open Access
- 1 January 1981
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 16 (10), 579-589
- https://doi.org/10.1051/rphysap:019810016010057900
Abstract
Fast ellipsometers have made feasible real-time assessment of heterostructure growth in a vapour phase ambient. A fast ellipsometer/MO-VPE experimental system is described and the possibilities of in situ ellipsometry are investigated in the case of GaAs-(Al, Ga)As structure growth : qualitative assessment in real-time and quantitative assessment (growth rate, composition determination and transition width) by experimental data processing after growthKeywords
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